用于缺陷检测的EUV暗场显微镜

Pub Date : 2011-09-16 DOI:10.1063/1.3625355

L. Juschkin, A. Maryasov, S. Herbert, A. Aretz, K. Bergmann, R. Lebert

{"title":"用于缺陷检测的EUV暗场显微镜","authors":"L. Juschkin, A. Maryasov, S. Herbert, A. Aretz, K. Bergmann, R. Lebert","doi":"10.1063/1.3625355","DOIUrl":null,"url":null,"abstract":"An actinic EUV microscope for defect detection on mask blanks for operation in dark field using a table‐top discharge‐produced plasma source has been developed. Several test structures (pits and bumps) on multilayer mirrors were investigated by our Schwarzschild objective‐based EUV microscope at 13.5‐nm wavelength and then characterized with an atomic force microscope. Possible defect‐detection limits with large field of view and moderate magnification are discussed in terms of required irradiation dose and system performance.","PeriodicalId":0,"journal":{"name":"","volume":" ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"EUV Dark‐Field Microscopy for Defect Inspection\",\"authors\":\"L. Juschkin, A. Maryasov, S. Herbert, A. Aretz, K. Bergmann, R. Lebert\",\"doi\":\"10.1063/1.3625355\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An actinic EUV microscope for defect detection on mask blanks for operation in dark field using a table‐top discharge‐produced plasma source has been developed. Several test structures (pits and bumps) on multilayer mirrors were investigated by our Schwarzschild objective‐based EUV microscope at 13.5‐nm wavelength and then characterized with an atomic force microscope. Possible defect‐detection limits with large field of view and moderate magnification are discussed in terms of required irradiation dose and system performance.\",\"PeriodicalId\":0,\"journal\":{\"name\":\"\",\"volume\":\" \",\"pages\":\"0\"},\"PeriodicalIF\":0.0,\"publicationDate\":\"2011-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.3625355\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.3625355","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

利用台式放电等离子体源，研制了一种用于暗场掩模坯缺陷检测的光化极紫外显微镜。利用基于史瓦西物镜的EUV显微镜在13.5 nm波长下研究了多层反射镜上的几个测试结构(凹坑和凸起)，并用原子力显微镜对其进行了表征。根据所需的辐照剂量和系统性能，讨论了大视场和中等放大倍率下可能的缺陷检测极限。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

EUV Dark‐Field Microscopy for Defect Inspection

An actinic EUV microscope for defect detection on mask blanks for operation in dark field using a table‐top discharge‐produced plasma source has been developed. Several test structures (pits and bumps) on multilayer mirrors were investigated by our Schwarzschild objective‐based EUV microscope at 13.5‐nm wavelength and then characterized with an atomic force microscope. Possible defect‐detection limits with large field of view and moderate magnification are discussed in terms of required irradiation dose and system performance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助