Influence of low-frequency 1ƒ noise on threshold characteristics of photodetectors with charge accumulation

Abstract

The well-known Viner-Levi expression is generalized for the case of low-frequency $\text{1}\text{ƒ}$ noise and finite duration of physical measurement. On this basis, formulae for calculation of the statical charge fluctuation in photodetectors are found. It is shown that for an integration time $\text{T}{}_0\text{ƒ}{}_0{}^{\mathrm{-1}}$, where ƒ₀ is thefrequency below which the photodetectors noise spectrum has the form of $\text{I}\text{ƒ}$, the detectivity of IR photoreceivers does not depend practically on the integration time T₀.