A novel extraction approach of extrinsic and intrinsic parameters of InGaAs/GaN pHEMTs

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI:10.1109/IMWS-AMP.2015.7324994

Andong Huang, Z. Zhong, Yong-xin Guo, Wen Wu

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引用次数: 3

Abstract

A novel extraction approach of extrinsic and intrinsic parameters of InGaAs/GaN pHEMTs is presented, for the first time, artificial bee colony algorithm is applied to the global-optimization based parameter extraction and a novel intrinsic Y-parameter error function is proposed, which is not sensitive to noise and measurement uncertainty, and also highly consistent to the overall S-parameter error function. The extrinsic elements are optimized at multi-bias points and the intrinsic ones at specific bias points. Only broad ranges of extrinsic parameters are required, and the extraction is unique and accurate. This method has been verified by 2 × 75 and 4 ×100 um gate width InGaAs pHEMTs from 1 GHz to 40 GHz. Excellent agreement is achieved between the measured and modeled S-parameters at all the biases and the conservation of the gate charge is well satisfied which further validates this novel extraction method.

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一种新的InGaAs/GaN pHEMTs的外在和内在参数提取方法

提出了一种新的InGaAs/GaN pHEMTs的外在参数和内在参数提取方法，首次将人工蜂群算法应用于基于全局优化的参数提取，并提出了一种新的对噪声和测量不确定度不敏感的内在y参数误差函数，该函数与整体s参数误差函数高度一致。外在因素在多偏置点处优化，内在因素在特定偏置点处优化。只需要较宽的外部参数范围，提取是唯一的和准确的。该方法已在2 × 75和4 ×100 um栅极宽度的InGaAs phemt (1 GHz至40 GHz)上得到验证。在所有偏差处，s参数的测量值与模型值吻合良好，栅极电荷守恒性良好，进一步验证了该方法的有效性。

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来源期刊

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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