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Simultaneous front and back side Cu metallization on power chips: DP: Discrete and power devices or ET/ID: Enabling technologies and innovative devices

2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2017-05-01 DOI:10.1109/ASMC.2017.7969227
C. Melvin, B. Roelfs
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电源芯片前后同步镀铜:DP:分立和电源器件或ET/ID:使能技术和创新器件
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2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
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