Quantum mechanical study of charge injection at the interface of polyethylene and platinum

A. Huzayyin, S. Boggs, R. Ramprasad
{"title":"Quantum mechanical study of charge injection at the interface of polyethylene and platinum","authors":"A. Huzayyin, S. Boggs, R. Ramprasad","doi":"10.1109/CEIDP.2011.6232777","DOIUrl":null,"url":null,"abstract":"Charge injection at a polyethylene/platinum interface is studied through use of density functional theory (DFT). Various crystal orientations at the interface hetero-structure are considered. The computed minimum barriers for electrons and hole injection at an impurity free interface are 3.15 and 2.62 eV, respectively. The work demonstrates that chemical impurities play an important role in the injection process. Impurity states, such as those of carbonyl, can reduce the effective barriers to charge injection to about 1.0 eV.","PeriodicalId":6317,"journal":{"name":"2011 Annual Report Conference on Electrical Insulation and Dielectric Phenomena","volume":"63 1","pages":"800-803"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Annual Report Conference on Electrical Insulation and Dielectric Phenomena","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEIDP.2011.6232777","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26

Abstract

Charge injection at a polyethylene/platinum interface is studied through use of density functional theory (DFT). Various crystal orientations at the interface hetero-structure are considered. The computed minimum barriers for electrons and hole injection at an impurity free interface are 3.15 and 2.62 eV, respectively. The work demonstrates that chemical impurities play an important role in the injection process. Impurity states, such as those of carbonyl, can reduce the effective barriers to charge injection to about 1.0 eV.
聚乙烯-铂界面电荷注入的量子力学研究
利用密度泛函理论(DFT)研究了聚乙烯/铂界面上的电荷注入。考虑了界面异质结构处的各种晶体取向。计算得到无杂质界面上电子和空穴注入的最小势垒分别为3.15 eV和2.62 eV。研究表明,化学杂质在注射过程中起着重要的作用。杂质态,如羰基态,可以将有效的电荷注入势垒降低到1.0 eV左右。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信