Thermal Compression Bonding: Understanding Heat Transfer by in Situ Measurements and Modeling

P. Bex, Teng Wang, M. Lofrano, V. Cherman, G. Capuz, E. Sleeckx, E. Beyne
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引用次数: 7

Abstract

Thermal compression bonding (TCB) is becoming an increasingly important process step in the assembly of advanced components such as fine pitch flip chip packages, system-in-package products, and 3D IC's. To increase the throughput and robustness of TCB processes, it is crucial to understand and control important process parameters like time, force and temperature. However, for TCB processes it becomes challenging to measure and control the temperature over the bond interface, since typically different temperature profiles are applied to top chip and substrate. This paper proposes and validates a new methodology for temperature measurements and characterization of heat transfer during a TCB process. On-chip thermal sensors measure the temperature in real time during the TCB process, at different locations on both top and bottom chips. Since the proposed methodology does not require the insertion of a thermocouple in between the top chip and substrate, it will enable more reliable measurements, especially for fine pitch micro bump devices.
热压缩键合:通过原位测量和建模来理解热传递
热压缩键合(TCB)在精密倒装芯片封装、系统级封装产品和3D集成电路等先进元件的组装中日益成为重要的工艺步骤。为了提高TCB工艺的吞吐量和鲁棒性,了解和控制时间、力和温度等重要工艺参数至关重要。然而,对于TCB工艺,测量和控制键合界面上的温度变得具有挑战性,因为通常不同的温度分布应用于顶部芯片和衬底。本文提出并验证了一种新的TCB过程中温度测量和传热表征方法。片上热传感器在TCB过程中实时测量顶部和底部芯片上不同位置的温度。由于所提出的方法不需要在顶部芯片和衬底之间插入热电偶,因此它将实现更可靠的测量,特别是对于细间距微碰撞器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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