Monolithically integrated In/sub 0.60/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP photoreceivers with submicron devices

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147399

R. Lai, P. Bhattacharya, D. Pavlidis

引用次数: 2

Abstract

The performance characteristics of planar InP-based PIN-MODFET front-end photoreceivers realized by molecular beam epitaxial regrowth are discussed. The full width at half maximum (FWHM) of the temporal response to photoexcitation for the full circuit is shown to be 60 ps, which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3-dB frequency response of the circuit with an effective input load resistance of 33 Omega is 15.0 GHz.<>

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单片集成In/sub 0.60/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP光电接收器与亚微米器件

讨论了分子束外延再生技术实现的平面inp型PIN-MODFET前端光电接收器的性能特点。整个电路的光激发时间响应的半最大值全宽度(FWHM)显示为60 ps，其转换为约6.5 GHz的带宽。在有效输入负载电阻为33 ω的情况下，电路的实测电频响应为15.0 GHz.>

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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