Analysis of Systematic Weak Point Structures using Design Based Automatic Defect Classification and Defect Review SEM Platform

T. Esposito, S. Jen, Qian Xie, D. Acharya, Julie Lee, F. Levitov
{"title":"Analysis of Systematic Weak Point Structures using Design Based Automatic Defect Classification and Defect Review SEM Platform","authors":"T. Esposito, S. Jen, Qian Xie, D. Acharya, Julie Lee, F. Levitov","doi":"10.1109/ASMC49169.2020.9185392","DOIUrl":null,"url":null,"abstract":"As the complexity of both design and processing increase for advanced FinFET technology, defect metrology will continue to provide the best strategies for Defect Review Scanning Electron Microscopy (DR-SEM) and Automatic Defect Classification (ADC). The precise defect location navigation, and the accuracy of random and systematic defect classification can be improved by introducing Computer-Aided Design (CAD) into DR-SEM and ADC processes. The Design Based ADC (DBA) not only differentiates systematic and random defect on CAD for yield control but also determines the precise defect locations for weak point analysis. We will present a method for the implementation of weak point CAD for DR-SEM review and ADC through a case study of a BEOL CMP layer of an advanced FinFET process demonstrating its benefit to defect analysis and control.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"50 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185392","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

As the complexity of both design and processing increase for advanced FinFET technology, defect metrology will continue to provide the best strategies for Defect Review Scanning Electron Microscopy (DR-SEM) and Automatic Defect Classification (ADC). The precise defect location navigation, and the accuracy of random and systematic defect classification can be improved by introducing Computer-Aided Design (CAD) into DR-SEM and ADC processes. The Design Based ADC (DBA) not only differentiates systematic and random defect on CAD for yield control but also determines the precise defect locations for weak point analysis. We will present a method for the implementation of weak point CAD for DR-SEM review and ADC through a case study of a BEOL CMP layer of an advanced FinFET process demonstrating its benefit to defect analysis and control.
基于设计的缺陷自动分类与缺陷评审SEM平台的系统弱点结构分析
随着先进FinFET技术的设计和加工复杂性的增加,缺陷计量将继续为缺陷审查扫描电子显微镜(DR-SEM)和自动缺陷分类(ADC)提供最佳策略。将计算机辅助设计(CAD)引入到DR-SEM和ADC过程中,可以提高缺陷定位导航的精度,以及随机和系统缺陷分类的精度。基于设计的模数转换器(DBA)不仅可以区分成品率控制中的系统缺陷和随机缺陷,还可以确定缺陷的精确位置进行弱点分析。我们将通过对先进FinFET工艺的BEOL CMP层的案例研究,提出一种用于DR-SEM审查和ADC的弱点CAD实施方法,展示其对缺陷分析和控制的好处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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