Optical Properties of CVD-Deposited Dielectric Films for Microelectronic Devices

Abstract

Optical characterization of dielectric films used in integrated circuit device manufacturing can give information on their optical behavior as well as on their structural properties and composition. The results obtained on several undoped and doped silicon oxides, silicon oxynitrides, and silicon nitrides usually employed for microelectronic applications both in the ultraviolet-visible and infrared spectral ranges are illustrated.