Comparison of the properties of Pb(ZrTi)O/sub 3/ thin films obtained by MOCVD using different source materials

Abstract

The properties of Pb(Zr,Ti)O/sub 3/ (PZT) thin films grown by MOCVD using a variety of source materials were compared and discussed. In the growth of the PZT thin films, three different Pb precursors were used -Pb(C/sub 2/H/sub 5/)/sub 4/, Pb(DPM)/sub 2/ and (C/sub 2/H/sub 5/)/sub 3/PbOCH/sub 2/C(CH/sub 3/)/sub 3/. Ti(O-i-C/sub 3/H/sub 7/)/sub 4/ and Zr(O-t-C/sub 4/H/sub 9/)/sub 4/ were also used as the Ti and Zr precursors. The oxidizing gases used were O/sub 2/, NO/sub 2/, and O/sub 2/ containing O/sub 3/. When using three different Pb precursors, it was found that there was a difference in the growth temperature required to obtain perovskite PZT films. It seemed that differences in the electrical properties observed may be due to differences in the orientation, crystallinity, film composition and film thickness. When O/sub 2/ containing O/sub 3/ was used, an improvement in breakdown voltage was observed.