Fabrication by Mist CVD Method and Evaluation of Corundum Structured Oxide Semiconductor Thin Films

K. Kaneko, Taichi Nomura, Y. Fukui, S. Fujita
{"title":"Fabrication by Mist CVD Method and Evaluation of Corundum Structured Oxide Semiconductor Thin Films","authors":"K. Kaneko, Taichi Nomura, Y. Fukui, S. Fujita","doi":"10.2472/JSMS.59.686","DOIUrl":null,"url":null,"abstract":"We propose a novel corundum-structured oxide semiconductor alloy system of α-(Ga2O3)-(Fe2O3)-(Cr2O3) thin films as a potential material with multifunctional properties contributing to future unique devices. In this paper the focus is given on the detailed characterization of α-Fe2O3 thin films grown on c-plane sapphire substrates. α-Fe2O3 is an oxide semiconductor with the optical band gap of 2.2eV, exhibiting a weak ferromagnetic property, and is alloyed with α-Ga2O3 to develop promising potentials toward spintronic applications. The growth has been carried out by the mist chemical vapor deposition (CVD) method which has been developed by our group. In the experiment, we used water solution of iron acetylacetonate [(C5H8O2)3Fe] as a Fe source and air as carrier gas. The growth temperature was set at 500°C. X-ray diffraction measurements revealed the successful formation of corundum-structured α-Fe2O3 thin films. The full-width at half maximum of X-ray diffraction rocking curve was as small as 41arcsec. In-plane pole figure measurements indicated that α-Fe2O3 thin films were epitaxially grown on the substrate, but that rotational domains were contained with the volume ratio of about 0.7%. The atomic force microscope surface image showed many grains and the root mean square roughness was 1.26nm. These results showed the successful fabrication of highly-crystalline epitaxial α-Fe2O3 thin films on c-plane sapphire substrates, though further efforts to improve the surface morphology were suggested.","PeriodicalId":17366,"journal":{"name":"journal of the Japan Society for Testing Materials","volume":"29 1","pages":"686-689"},"PeriodicalIF":0.0000,"publicationDate":"2010-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"journal of the Japan Society for Testing Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2472/JSMS.59.686","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

We propose a novel corundum-structured oxide semiconductor alloy system of α-(Ga2O3)-(Fe2O3)-(Cr2O3) thin films as a potential material with multifunctional properties contributing to future unique devices. In this paper the focus is given on the detailed characterization of α-Fe2O3 thin films grown on c-plane sapphire substrates. α-Fe2O3 is an oxide semiconductor with the optical band gap of 2.2eV, exhibiting a weak ferromagnetic property, and is alloyed with α-Ga2O3 to develop promising potentials toward spintronic applications. The growth has been carried out by the mist chemical vapor deposition (CVD) method which has been developed by our group. In the experiment, we used water solution of iron acetylacetonate [(C5H8O2)3Fe] as a Fe source and air as carrier gas. The growth temperature was set at 500°C. X-ray diffraction measurements revealed the successful formation of corundum-structured α-Fe2O3 thin films. The full-width at half maximum of X-ray diffraction rocking curve was as small as 41arcsec. In-plane pole figure measurements indicated that α-Fe2O3 thin films were epitaxially grown on the substrate, but that rotational domains were contained with the volume ratio of about 0.7%. The atomic force microscope surface image showed many grains and the root mean square roughness was 1.26nm. These results showed the successful fabrication of highly-crystalline epitaxial α-Fe2O3 thin films on c-plane sapphire substrates, though further efforts to improve the surface morphology were suggested.
薄雾CVD法制备刚玉结构氧化物半导体薄膜及评价
我们提出了一种新的刚玉结构的α-(Ga2O3)-(Fe2O3)-(Cr2O3)薄膜氧化物半导体合金系统,作为一种具有多功能特性的潜在材料,有助于未来独特的器件。本文重点研究了在c面蓝宝石衬底上生长α-Fe2O3薄膜的详细表征。α-Fe2O3是一种光学带隙为2.2eV的氧化物半导体,具有弱铁磁性,与α-Ga2O3合金具有自旋电子应用前景。采用本课组开发的薄雾化学气相沉积(CVD)法进行生长。在实验中,我们以乙酰丙酮铁[(C5H8O2)3Fe]水溶液为铁源,空气为载气。生长温度设定为500℃。x射线衍射测量结果表明,成功地形成了刚玉结构的α-Fe2O3薄膜。x射线衍射摇摆曲线半最大值全宽仅为41arcsec。面内极图测量结果表明,α-Fe2O3薄膜外延生长在衬底上,但含有旋转畴,体积比约为0.7%。原子力显微镜表面图像显示晶粒较多,均方根粗糙度为1.26nm。这些结果表明,在c面蓝宝石衬底上成功制备了高晶化α-Fe2O3外延薄膜,但建议进一步改进表面形貌。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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