Radiation hardness characterization of low gain avalanche detector prototypes for the high granularity timing detector

Q4 Engineering
Xiao Yang, Kuo-Yan Ma, Xiangxuan Zheng, Yanwen Liu
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Abstract

The high granularity timing detector (HGTD) is a crucial component of the ATLAS phase II upgrade to cope with the extremely high pile-up (the average number of interactions per bunch crossing can be as high as 200). With the precise timing information (σt~30 ps) of the tracks, the track-to-vertex association can be performed in the “4-D” space. The Low Gain Avalanche Detector (LGAD) technology is chosen for the sensors, which can provide the required timing resolution and good signal-to-noise ratio. Hamamatsu Photonics K.K. (HPK) has produced the LGAD with thicknesses of 35 μm and 50 μm. The University of Science and Technology of China(USTC) has also developed and produced 50 μm LGADs prototypes with the Institute of Microelectronics (IME) of Chinese Academy of Sciences. To evaluate the irradiation hardness, the sensors are irradiated with the neutron at the JSI reactor facility and tested at USTC. The irradiation effects on both the gain layer and the bulk are characterized by I-V and C-V measurements at room temperature (20 ℃) or −30 ℃. The breakdown voltages and depletion voltages are extracted and presented as a function of the fluences. The final fitting of the acceptor removal model yielded the c-factor of 3.06×10−16 cm−2, 3.89×10−16 cm−2 and 4.12×10−16 cm−2 for the HPK-1.2, HPK-3.2 and USTC-1.1-W8, respectively, showing that the HPK-1.2 sensors have the most irradiation resistant gain layer. A novel analysis method is used to further exploit the data to get the relationship between the c-factor and initial doping density.
高粒度定时探测器低增益雪崩探测器样机的辐射硬度特性
高粒度定时探测器(HGTD)是ATLAS II阶段升级的关键组件,用于应对极高的堆积(每个束交叉的平均相互作用数可能高达200)。利用轨迹的精确时序信息(σt~30 ps),可以在“四维”空间中实现轨迹与顶点的关联。传感器采用低增益雪崩检测器(LGAD)技术,可以提供所需的时序分辨率和良好的信噪比。Hamamatsu Photonics K.K. (HPK)生产了厚度为35 μm和50 μm的LGAD。中国科学技术大学(USTC)还与中国科学院微电子研究所(IME)合作开发并生产了50 μm lgad原型。为了评估辐照硬度,传感器在JSI反应堆设施上进行了中子辐照,并在中国科技大学进行了测试。通过室温(20℃)和- 30℃下的I-V和C-V测量来表征辐照对增益层和本体的影响。击穿电压和耗尽电压被提取出来并作为影响的函数表示出来。HPK-1.2、HPK-3.2和USTC-1.1-W8的受体去除模型最终拟合得到的c因子分别为3.06×10−16 cm−2、3.89×10−16 cm−2和4.12×10−16 cm−2,表明HPK-1.2传感器具有最耐辐照的增益层。采用一种新的分析方法对数据进行进一步挖掘,得到了c因子与初始掺杂密度之间的关系。
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来源期刊
中国科学技术大学学报
中国科学技术大学学报 Engineering-Mechanical Engineering
CiteScore
0.40
自引率
0.00%
发文量
5692
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