И. В. Малышев, М. С. Михайленко, А. Е. Пестов, М. Н. Торопов, А. К. Чернышев, Николай Иванович Чхало
{"title":"Внеосевой асферический коллектор для экстремальной ультрафиолетовой литографии и мягкой рентгеновской микроскопии","authors":"И. В. Малышев, М. С. Михайленко, А. Е. Пестов, М. Н. Торопов, А. К. Чернышев, Николай Иванович Чхало","doi":"10.21883/jtf.2023.07.55754.99-23","DOIUrl":null,"url":null,"abstract":"By the method of ion-beam shape correction, a small-sized ion beam formed a non–axisymmetric aspherical profile of the collector surface for an extreme ultraviolet radiation source TEUS-S100 with a numerical aperture of NA= 0.25, PV on the surface is 36.3 microns, the surface shape accuracy by standard deviation is 0.074 microns, which allowed to obtain a focusing spot with a width of 300 microns at half-height. To solve the problem, the technological ion source KLAN-53M was upgraded – the flat ion-optical system was replaced with a focusing one. The ion-optical system consisting of a pair of concave grids with a radius of curvature of 60 mm provided the following parameters of the ion beam: the ion current is 20 mA, the width at half–height is 8.2 mm at a distance of 66 mm from the cutoff of the ion source.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Журнал технической физики","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/jtf.2023.07.55754.99-23","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
By the method of ion-beam shape correction, a small-sized ion beam formed a non–axisymmetric aspherical profile of the collector surface for an extreme ultraviolet radiation source TEUS-S100 with a numerical aperture of NA= 0.25, PV on the surface is 36.3 microns, the surface shape accuracy by standard deviation is 0.074 microns, which allowed to obtain a focusing spot with a width of 300 microns at half-height. To solve the problem, the technological ion source KLAN-53M was upgraded – the flat ion-optical system was replaced with a focusing one. The ion-optical system consisting of a pair of concave grids with a radius of curvature of 60 mm provided the following parameters of the ion beam: the ion current is 20 mA, the width at half–height is 8.2 mm at a distance of 66 mm from the cutoff of the ion source.