{"title":"Input-free cascode V/sub thn/ and V/sub thp/ extractor circuits","authors":"Yanbin Wang, G. Tarr, Yanjie Wang","doi":"10.1109/ICECS.2004.1399673","DOIUrl":null,"url":null,"abstract":"Input-free nMOS and pMOS V/sub th/ (threshold voltage) extractor circuits are presented. They use a cascode structure to eliminate the error caused by the body effect. The extracted V/sub th/ for nMOS and pMOS is referenced to ground and V/sub DD/ respectively. Both nMOS and pMOS V/sub th/ extractors have high accuracy of almost 100% from the HSPICE simulation. The nMOS and pMOS extractor circuits have been simulated in HSPICE using TSMC 0.35 /spl mu/m CMOS technology at 2 V and 2.9 V power supply with low power consumption of 0.29 mW and 0.44 mW respectively.","PeriodicalId":38467,"journal":{"name":"Giornale di Storia Costituzionale","volume":"44 1","pages":"282-285"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Giornale di Storia Costituzionale","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2004.1399673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Arts and Humanities","Score":null,"Total":0}
引用次数: 1
Abstract
Input-free nMOS and pMOS V/sub th/ (threshold voltage) extractor circuits are presented. They use a cascode structure to eliminate the error caused by the body effect. The extracted V/sub th/ for nMOS and pMOS is referenced to ground and V/sub DD/ respectively. Both nMOS and pMOS V/sub th/ extractors have high accuracy of almost 100% from the HSPICE simulation. The nMOS and pMOS extractor circuits have been simulated in HSPICE using TSMC 0.35 /spl mu/m CMOS technology at 2 V and 2.9 V power supply with low power consumption of 0.29 mW and 0.44 mW respectively.