A 9b-Linear 14GHz Integrating-Mode Phase Interpolator in 5nm FinFET Process

A. K. Mishra, Yifei Li, Pawan Agarwal, S. Shekhar
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引用次数: 1

Abstract

Increased data-rates and multi-lane SerDes implementations impose stringent conditions for CDRs to produce low-jitter clocking that is capable of managing frequency and phase offsets. Consequently, high-speed phase interpolators (Pls) must be both low-power and compact for multi-lane requirements, but also high-resolution with respect to the clock period $(\mathrm{T}_{\text{period}})$, with high static and dynamic phase linearity to minimize the PI jitter. Prior art in Pls is limited to 7-8b measured resolution [1]–[4], and INL of >500fs [1]–[4]. We present a 9b Pl; even with the additional bits, the proposed PI consumes low power of 0.43mW/GHz and a small area. The worst rotation spur is at least 8.1 dB lower (than [4]), and DNL/INL values of 295fs/510fs are $> 144\times$ better than prior-art. Implemented in 5nm technology at VDD $=075\mathrm{V}$, our design leverages digital and analog techniques easily suited to FinFET operation.
5nm FinFET制程中9b-线性14GHz积型相位插补器
增加的数据速率和多通道SerDes实现对cdr产生能够管理频率和相位偏移的低抖动时钟施加了严格的条件。因此,高速相位插补器(Pls)必须具有低功耗和紧凑的多通道要求,而且在时钟周期$(\ mathm {T}_{\text{period}})$方面具有高分辨率,具有高静态和动态相位线性度,以最大限度地减少PI抖动。Pls的现有技术限制在7-8b测量分辨率[1]- [4],INL >500fs[1] -[4]。我们提出了一个9b Pl;即使有额外的比特,所提出的PI消耗0.43mW/GHz的低功耗和小面积。最坏的旋转杂散至少降低8.1 dB(比[4]),295fs/510fs的DNL/INL值比现有技术好144倍。我们的设计采用5nm技术,VDD $=075\ mathm {V}$,利用数字和模拟技术轻松适用于FinFET操作。
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