Influence of the porosity of SiC on its optical properties and oxidation kinetics

L. Charpentier, C. Caliot, P. David, A. Baux, C. Heisel, D. Rochais, T. Chartier
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引用次数: 2

Abstract

CEA laboratory has developed an additive manufacturing technique with SiC powders and the material obtained need to be characterized. Therefore, we studied the change of optical properties and oxidation kinetics of SiC samples for the last step of the elaboration process. In this investigation, the optical properties and the oxidation kinetics of two SiC materials of two different densities and post-treated at LCTS laboratory have been compared. Their room-temperature optical properties were measured and both materials were oxidized using solar facilities at PROMES laboratory. It was observed that a higher porosity would increase both the solar absorptivity α and total emissivity e of the SiC. Nevertheless, the α/e ratio is improved with the density, increasing from 1.04 to 1.22. The less dense SiC presents also a faster oxidation kinetics, the determined activation energy increasing from 110 to 270 kJ mol−1.CEA laboratory has developed an additive manufacturing technique with SiC powders and the material obtained need to be characterized. Therefore, we studied the change of optical properties and oxidation kinetics of SiC samples for the last step of the elaboration process. In this investigation, the optical properties and the oxidation kinetics of two SiC materials of two different densities and post-treated at LCTS laboratory have been compared. Their room-temperature optical properties were measured and both materials were oxidized using solar facilities at PROMES laboratory. It was observed that a higher porosity would increase both the solar absorptivity α and total emissivity e of the SiC. Nevertheless, the α/e ratio is improved with the density, increasing from 1.04 to 1.22. The less dense SiC presents also a faster oxidation kinetics, the determined activation energy increasing from 110 to 270 kJ mol−1.
碳化硅孔隙率对其光学性质和氧化动力学的影响
CEA实验室开发了一种SiC粉末增材制造技术,所获得的材料需要进行表征。因此,我们研究了SiC样品的光学性质和氧化动力学的变化,作为精化过程的最后一步。在本研究中,比较了两种不同密度的SiC材料在LCTS实验室后处理后的光学性质和氧化动力学。测量了两种材料的室温光学性质,并利用PROMES实验室的太阳能设备对两种材料进行了氧化。结果表明,孔隙率越高,碳化硅的太阳吸收率α和总发射率e越高。α/e比值随密度增大而增大,由1.04增大到1.22。密度较低的SiC也表现出更快的氧化动力学,测定的活化能从110增加到270 kJ mol−1。CEA实验室开发了一种SiC粉末增材制造技术,所获得的材料需要进行表征。因此,我们研究了SiC样品的光学性质和氧化动力学的变化,作为精化过程的最后一步。在本研究中,比较了两种不同密度的SiC材料在LCTS实验室后处理后的光学性质和氧化动力学。测量了两种材料的室温光学性质,并利用PROMES实验室的太阳能设备对两种材料进行了氧化。结果表明,孔隙率越高,碳化硅的太阳吸收率α和总发射率e越高。α/e比值随密度增大而增大,由1.04增大到1.22。密度较低的SiC也表现出更快的氧化动力学,测定的活化能从110增加到270 kJ mol−1。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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