Electronic and temperature dependent transport properties of ultrathin As and Sb nanowires

Shilpa Singh, Prabal Dev Bhuyan, Sanjeev K. Gupta, Y. Sonvane, P. Gajjar
{"title":"Electronic and temperature dependent transport properties of ultrathin As and Sb nanowires","authors":"Shilpa Singh, Prabal Dev Bhuyan, Sanjeev K. Gupta, Y. Sonvane, P. Gajjar","doi":"10.1063/1.5113286","DOIUrl":null,"url":null,"abstract":"We have studied electronic and thermoelectric properties of ultrathin arsenic nanowire (As-NW) and antimony nanowire (Sb-NW). We have considered linear and rectangular structure of As and Sb. The negative value of binding energy shows its stability for all the structures. Electronic band structure of linear As-NW and Sb-NW shows formation of Dirac cone above Fermi level and quantum conductance of 2G0. Rectangular As-NW and Sb-NW shows band gap of 0.17eV and 0.78eV, respectively. Linear As-NW shows highest electrical and thermal conductivity with a value of 8.45×1019Ω−1m−1s−1 and 0.58×1015Wm−1K−1s−1 at room temperature, respectively. The rectangular Sb-NW shows least electrical and thermal conductivity. Linear structure of Sb-NW shows highest specific heat among the considered NWs. Figure of merit decreases linearly with increase in temperature for rectangular As-NW and Sb-NW while linear As-NW and SbNW shows parabolic variation with temperature. These ultrathin nanowires could emerge as possible applicant in the field of nanoelectronics and thermoelectric devices.We have studied electronic and thermoelectric properties of ultrathin arsenic nanowire (As-NW) and antimony nanowire (Sb-NW). We have considered linear and rectangular structure of As and Sb. The negative value of binding energy shows its stability for all the structures. Electronic band structure of linear As-NW and Sb-NW shows formation of Dirac cone above Fermi level and quantum conductance of 2G0. Rectangular As-NW and Sb-NW shows band gap of 0.17eV and 0.78eV, respectively. Linear As-NW shows highest electrical and thermal conductivity with a value of 8.45×1019Ω−1m−1s−1 and 0.58×1015Wm−1K−1s−1 at room temperature, respectively. The rectangular Sb-NW shows least electrical and thermal conductivity. Linear structure of Sb-NW shows highest specific heat among the considered NWs. Figure of merit decreases linearly with increase in temperature for rectangular As-NW and Sb-NW while linear As-NW and SbNW shows parabolic variation with temperature. These ultrathin nanowires could emerge as possible applicant...","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"31 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.5113286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

We have studied electronic and thermoelectric properties of ultrathin arsenic nanowire (As-NW) and antimony nanowire (Sb-NW). We have considered linear and rectangular structure of As and Sb. The negative value of binding energy shows its stability for all the structures. Electronic band structure of linear As-NW and Sb-NW shows formation of Dirac cone above Fermi level and quantum conductance of 2G0. Rectangular As-NW and Sb-NW shows band gap of 0.17eV and 0.78eV, respectively. Linear As-NW shows highest electrical and thermal conductivity with a value of 8.45×1019Ω−1m−1s−1 and 0.58×1015Wm−1K−1s−1 at room temperature, respectively. The rectangular Sb-NW shows least electrical and thermal conductivity. Linear structure of Sb-NW shows highest specific heat among the considered NWs. Figure of merit decreases linearly with increase in temperature for rectangular As-NW and Sb-NW while linear As-NW and SbNW shows parabolic variation with temperature. These ultrathin nanowires could emerge as possible applicant in the field of nanoelectronics and thermoelectric devices.We have studied electronic and thermoelectric properties of ultrathin arsenic nanowire (As-NW) and antimony nanowire (Sb-NW). We have considered linear and rectangular structure of As and Sb. The negative value of binding energy shows its stability for all the structures. Electronic band structure of linear As-NW and Sb-NW shows formation of Dirac cone above Fermi level and quantum conductance of 2G0. Rectangular As-NW and Sb-NW shows band gap of 0.17eV and 0.78eV, respectively. Linear As-NW shows highest electrical and thermal conductivity with a value of 8.45×1019Ω−1m−1s−1 and 0.58×1015Wm−1K−1s−1 at room temperature, respectively. The rectangular Sb-NW shows least electrical and thermal conductivity. Linear structure of Sb-NW shows highest specific heat among the considered NWs. Figure of merit decreases linearly with increase in temperature for rectangular As-NW and Sb-NW while linear As-NW and SbNW shows parabolic variation with temperature. These ultrathin nanowires could emerge as possible applicant...
超薄砷和锑纳米线的电子和温度相关输运特性
我们研究了超薄砷纳米线(As-NW)和锑纳米线(Sb-NW)的电子和热电性质。我们考虑了As和Sb的线性和矩形结构,结合能的负值表明其对所有结构都具有稳定性。线性As-NW和Sb-NW的电子能带结构显示出费米能级以上狄拉克锥的形成和2G0的量子电导。矩形As-NW和Sb-NW的带隙分别为0.17eV和0.78eV。线性As-NW在室温下的电导率和导热系数最高,分别为8.45×1019Ω−1m−1s−1和0.58×1015Wm−1K−1s−1。矩形Sb-NW的电导率和导热系数最小。nb - nw的线性结构显示出最高的比热。矩形As-NW和Sb-NW的优点系数随温度的升高呈线性降低,而线性As-NW和SbNW随温度呈抛物线变化。这些超薄纳米线在纳米电子学和热电器件领域具有广阔的应用前景。我们研究了超薄砷纳米线(As-NW)和锑纳米线(Sb-NW)的电子和热电性质。我们考虑了As和Sb的线性和矩形结构,结合能的负值表明其对所有结构都具有稳定性。线性As-NW和Sb-NW的电子能带结构显示出费米能级以上狄拉克锥的形成和2G0的量子电导。矩形As-NW和Sb-NW的带隙分别为0.17eV和0.78eV。线性As-NW在室温下的电导率和导热系数最高,分别为8.45×1019Ω−1m−1s−1和0.58×1015Wm−1K−1s−1。矩形Sb-NW的电导率和导热系数最小。nb - nw的线性结构显示出最高的比热。矩形As-NW和Sb-NW的优点系数随温度的升高呈线性降低,而线性As-NW和SbNW随温度呈抛物线变化。这些超薄纳米线可能成为…
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