A. A. Shboul, Andy Shih, M. Oukachmih, R. Izquierdo
{"title":"ppb Sensing Level Hydrogen Sulphide at Room Temperature Using Indium Oxide Gas Sensors","authors":"A. A. Shboul, Andy Shih, M. Oukachmih, R. Izquierdo","doi":"10.1109/SENSORS43011.2019.8956528","DOIUrl":null,"url":null,"abstract":"Hydrogen sulphide (H<inf>2</inf>S) sensors were prepared from mixtures of indium oxide (In<inf>2</inf>O<inf>3</inf>), graphite flakes (Gt) and polystyrene (PS). These sensors were found to be highly sensitive to as low as 100 ppb of H2S gas at room temperature and showed high resistance to humidity changes up to relative humidity (RH~93%). The sensor’s performance when exposed to air and H<inf>2</inf>S gas reveals the sensing mechanism of In<inf>2</inf>O<inf>3</inf> films to H<inf>2</inf>S at room temperature depends mainly on the partial sulfuration of In<inf>2</inf>O<inf>3</inf> by H<inf>2</inf>S gas.","PeriodicalId":6710,"journal":{"name":"2019 IEEE SENSORS","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE SENSORS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSORS43011.2019.8956528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Hydrogen sulphide (H2S) sensors were prepared from mixtures of indium oxide (In2O3), graphite flakes (Gt) and polystyrene (PS). These sensors were found to be highly sensitive to as low as 100 ppb of H2S gas at room temperature and showed high resistance to humidity changes up to relative humidity (RH~93%). The sensor’s performance when exposed to air and H2S gas reveals the sensing mechanism of In2O3 films to H2S at room temperature depends mainly on the partial sulfuration of In2O3 by H2S gas.
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