S-TFT: an analytical model of polysilicon thin-film transistors for circuit simulation

Gi-Young Yang, Y. Kim, Taek-Soo Kim, J. Kong
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引用次数: 1

Abstract

This paper describes the S-TFT model developed for poly-Si TFT which improves the accuracy dramatically. The proposed model emphasis is on deriving the large parasitic resistance characteristics at low Vds by adding the junction current to the on-current. The physical-based subthreshold and off-state current model are also considered. The model guarantees the continuities of the current and the derivatives. Compared to the RPI model, known to be the best model, the proposed model improved overall simulation speed by 40-50% due to the better convergence characteristics.
S-TFT:用于电路模拟的多晶硅薄膜晶体管解析模型
本文介绍了针对多晶硅TFT开发的S-TFT模型,该模型大大提高了精度。该模型的重点是通过在导通电流上增加结电流来获得低Vds下的大寄生电阻特性。还考虑了基于物理的子阈值和断态电流模型。该模型保证了当前和导数的连续性。与已知的最佳模型RPI模型相比,该模型由于具有更好的收敛特性,将整体仿真速度提高了40-50%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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