Temperature dependent I-V characteristics of Ni doped topological insulator Bi2Se3 nanoparticles

DAE SOLID STATE PHYSICS SYMPOSIUM 2018 Pub Date : 2019-07-12 DOI:10.1063/1.5112986

K. Mazumder, Alfa Sharma, Y. Kumar, P. Shirage

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引用次数: 2

Abstract

Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.

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Ni掺杂拓扑绝缘体Bi2Se3纳米颗粒的I-V特性

采用水热法制备了硒化铋(Bi2Se3)、三维拓扑绝缘体材料和掺杂镍(Ni)的Bi2Se3样品的纳米结构，探讨了其I-V特性。采用XRD、FESEM和UV-vis光谱对其结构、形貌和光学性质进行了表征。温度相关的I-V显示，由于表面缺陷和光学性质的剪裁，Ni掺杂Bi2Se3的载流性能增强。本研究提出了Bi2Se3拓扑绝缘体作为下一代量子计算材料的适用性。采用水热法制备了硒化铋(Bi2Se3)、三维拓扑绝缘体材料和掺杂镍(Ni)的Bi2Se3样品的纳米结构，探讨了其I-V特性。采用XRD、FESEM和UV-vis光谱对其结构、形貌和光学性质进行了表征。温度相关的I-V显示，由于表面缺陷和光学性质的剪裁，Ni掺杂Bi2Se3的载流性能增强。本研究提出了Bi2Se3拓扑绝缘体作为下一代量子计算材料的适用性。

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DAE SOLID STATE PHYSICS SYMPOSIUM 2018

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