A 114-pW PMOS-only, trim-free voltage reference with 0.26% within-wafer inaccuracy for nW systems

Qing Dong, Kaiyuan Yang, D. Blaauw, D. Sylvester
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引用次数: 50

Abstract

A sub-nW voltage reference is presented that uses only PMOS transistors, thereby providing inherently low process variation and enabling trim-free operation for LDOs and other applications in nW microsystems. Sixty chips from 3 different wafers in 180nm CMOS are measured, showing an untrimmed within-wafer σ/μ of 0.26% and wafer-to-wafer σ/μ of 1.9%. Measurement results also show a temperature coefficient of 48-124ppm/°C from -40°C to 85°C. Outputting a 0.986V reference voltage, the reference operates down to 1.2V and consumes 114pW at 25°C.
一个114 pw的pmos,无微调电压基准,圆内误差0.26%,用于nW系统
提出了一种仅使用PMOS晶体管的亚nW电压基准,从而提供了固有的低工艺变化,并使ldo和nW微系统中的其他应用能够实现无修边操作。测量了来自3个不同晶圆的60个180nm CMOS芯片,晶圆内未修整σ/μ为0.26%,晶圆间σ/μ为1.9%。测量结果还显示温度系数48-124ppm/°C从-40°C到85°C。输出0.986V参考电压,基准工作电压低至1.2V,在25°C时消耗114pW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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