A hard tube type pulse generator for plasma immersion ion implantation

J. O. Rossi, M. Ueda, V. Spassov, J. Barroso
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引用次数: 3

Abstract

This paper describes a high voltage pulsed power system for a plasma immersion ion implantation (PIII) experiment. The pulsed power supply consists of a high voltage pulse generator that uses a hard tube switch. The reason for using this type of circuit category in the PIII facility rather than a previously used pulse-forming network (PFN) circuit configuration is stated. The experimental results of the application of this device to a glow discharge PIII are also discussed. In order to assess these results, a simple electrical model describes the plasma as a resistive load in parallel. With a capacitance taking into account the pulse rise-time distortion caused by a long coaxial feeding cable. Plasma parameters for PIII processing, such as implantation ion average current and plasma sheath thickness, are calculated from the experimental results.
一种用于等离子体浸没离子注入的硬管式脉冲发生器
介绍了一种用于等离子体浸没离子注入实验的高压脉冲电源系统。脉冲电源由使用硬管开关的高压脉冲发生器组成。说明了在PIII设施中使用这种类型的电路类别而不是以前使用的脉冲形成网络(PFN)电路配置的原因。讨论了该装置在辉光放电PIII中的应用实验结果。为了评估这些结果,一个简单的电模型将等离子体描述为并联的电阻性负载。电容考虑了长同轴馈电电缆引起的脉冲上升时间畸变。根据实验结果计算了PIII加工的等离子体参数,如注入离子平均电流和等离子体鞘层厚度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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