{"title":"A hard tube type pulse generator for plasma immersion ion implantation","authors":"J. O. Rossi, M. Ueda, V. Spassov, J. Barroso","doi":"10.1109/PPC.1999.823808","DOIUrl":null,"url":null,"abstract":"This paper describes a high voltage pulsed power system for a plasma immersion ion implantation (PIII) experiment. The pulsed power supply consists of a high voltage pulse generator that uses a hard tube switch. The reason for using this type of circuit category in the PIII facility rather than a previously used pulse-forming network (PFN) circuit configuration is stated. The experimental results of the application of this device to a glow discharge PIII are also discussed. In order to assess these results, a simple electrical model describes the plasma as a resistive load in parallel. With a capacitance taking into account the pulse rise-time distortion caused by a long coaxial feeding cable. Plasma parameters for PIII processing, such as implantation ion average current and plasma sheath thickness, are calculated from the experimental results.","PeriodicalId":11209,"journal":{"name":"Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358)","volume":"1 1","pages":"1468-1471 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPC.1999.823808","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper describes a high voltage pulsed power system for a plasma immersion ion implantation (PIII) experiment. The pulsed power supply consists of a high voltage pulse generator that uses a hard tube switch. The reason for using this type of circuit category in the PIII facility rather than a previously used pulse-forming network (PFN) circuit configuration is stated. The experimental results of the application of this device to a glow discharge PIII are also discussed. In order to assess these results, a simple electrical model describes the plasma as a resistive load in parallel. With a capacitance taking into account the pulse rise-time distortion caused by a long coaxial feeding cable. Plasma parameters for PIII processing, such as implantation ion average current and plasma sheath thickness, are calculated from the experimental results.