Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design

A. McKenzie, B. King, K. Rae, S. Thoms, N. Gerrard, J. Orchard, K. Nishi, K. Takemasa, M. Sugawara, R. J. Taylor, D. Childs, D. Maclaren, R. Hogg
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引用次数: 8

Abstract

We report the engineering of air-voids embedded in GaAs-based photonic crystal surface emitting lasers realised by metalorganic vapour-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index planes is exploited in order to increase void volume, leading to an order of magnitude reduction in threshold current and an increase in output power through an increase in the associated grating coupling strength.
基于光栅轮廓设计的外延再生gaas光子晶体表面发射激光器中的空洞工程
本文报道了利用金属有机气相外延再生技术在gaas基光子晶体表面发射激光器中嵌入空腔的工程。在再生之前,通过修改反应器内的光子晶体光栅轮廓,获得了两种不同的空隙几何形状。通过扫描透射电子显微镜分析推断了空洞形成的机制,并通过使用AlAs/GaAs超晶格结构说明了生长锋的演变。(100)表面的快速横向增长和在更高折射率平面上的缓慢扩散之间的竞争被利用,以增加空隙体积,导致阈值电流降低一个数量级,并通过增加相关光栅耦合强度增加输出功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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