Somnath Kundu, Muqing Liu, R. Wong, Shi-Jie Wen, C. Kim
{"title":"A fully integrated 40pF output capacitor beat-frequency-quantizer-based digital LDO with built-in adaptive sampling and active voltage positioning","authors":"Somnath Kundu, Muqing Liu, R. Wong, Shi-Jie Wen, C. Kim","doi":"10.1109/ISSCC.2018.8310307","DOIUrl":null,"url":null,"abstract":"Integrated voltage regulators with a wide output current/voltage dynamic range are required to support fast dynamic voltage and frequency scaling (DVFS). Low Dropout Regulators (LDOs) based on digital-intensive circuits have been gaining popularity [1]-[4] due to their compactness, process scalability, high immunity to process-voltage-temperature (PVT) variations and easy programmability for design optimization. Conventional digital LDOs utilizing a comparator and shift-registers [1] suffer from a slow response time during a large/fast change in load current (Iload). Higher sampling frequency (fS) improves the response time, but at the cost of increased power consumption and reduced loop stability. Multi-bit quantizers utilizing ADCs [2-4] can reduce the settling time, however, the presence of a high resolution ADC and the control logic increases the design complexity. Moreover, the ADC resolution limits the maximum fS. In order to overcome the trade-off between speed and power, adaptive sampling techniques were incorporated in [1], [4]. But the overhead of multiple VCOs operating simultaneously and a separate overshoot/droop detection circuitry [1], or an event-driven controller with 7b ADC [4], increase the complexity and power consumption. Furthermore, none of the previous designs incorporated active voltage positioning (AVP), a popular ripple-suppression technique, whereby the LDO output is set slightly above (in low-activity state) or below (in high-activity state) the reference voltage depending on the processor workload conditions [5].","PeriodicalId":6617,"journal":{"name":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","volume":"8 1","pages":"308-310"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2018.8310307","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25
Abstract
Integrated voltage regulators with a wide output current/voltage dynamic range are required to support fast dynamic voltage and frequency scaling (DVFS). Low Dropout Regulators (LDOs) based on digital-intensive circuits have been gaining popularity [1]-[4] due to their compactness, process scalability, high immunity to process-voltage-temperature (PVT) variations and easy programmability for design optimization. Conventional digital LDOs utilizing a comparator and shift-registers [1] suffer from a slow response time during a large/fast change in load current (Iload). Higher sampling frequency (fS) improves the response time, but at the cost of increased power consumption and reduced loop stability. Multi-bit quantizers utilizing ADCs [2-4] can reduce the settling time, however, the presence of a high resolution ADC and the control logic increases the design complexity. Moreover, the ADC resolution limits the maximum fS. In order to overcome the trade-off between speed and power, adaptive sampling techniques were incorporated in [1], [4]. But the overhead of multiple VCOs operating simultaneously and a separate overshoot/droop detection circuitry [1], or an event-driven controller with 7b ADC [4], increase the complexity and power consumption. Furthermore, none of the previous designs incorporated active voltage positioning (AVP), a popular ripple-suppression technique, whereby the LDO output is set slightly above (in low-activity state) or below (in high-activity state) the reference voltage depending on the processor workload conditions [5].