S. Amakawa, R. Goda, K. Katayama, K. Takano, T. Yoshida, M. Fujishima
{"title":"Wideband CMOS decoupling power line for millimeter-wave applications","authors":"S. Amakawa, R. Goda, K. Katayama, K. Takano, T. Yoshida, M. Fujishima","doi":"10.1109/MWSYM.2015.7167043","DOIUrl":null,"url":null,"abstract":"A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 Ω in 20 GHz-170GHz and below 2 Ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2015.7167043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 Ω in 20 GHz-170GHz and below 2 Ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.