SERIAL RESISTANCE OF PHOTOCONVERTERS SNO2/PCDTE, ITO/PCDTE И IN2O3/PCDTE BASED ON CADMIUM TELLURIDE

S. Utamuradova, S. Muzafarova
{"title":"SERIAL RESISTANCE OF PHOTOCONVERTERS SNO2/PCDTE, ITO/PCDTE И IN2O3/PCDTE BASED ON CADMIUM TELLURIDE","authors":"S. Utamuradova, S. Muzafarova","doi":"10.31618/esu.2413-9335.2021.1.93.1550","DOIUrl":null,"url":null,"abstract":"The operational parameters and efficiency of the SnO2 / pCdTe, ITO / pCdTe and In2O3 / pCdTe photoconverters have been investigated. The real values of the series resistance of the structures under study have been determined. In film photoconverters, a significant contribution to the series resistance is made by the resistance of the transition dielectric layer of tellurium oxide TeO2 between the semiconductor and the resistance between the rear ohmic contact of the structures.","PeriodicalId":11879,"journal":{"name":"EurasianUnionScientists","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EurasianUnionScientists","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31618/esu.2413-9335.2021.1.93.1550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The operational parameters and efficiency of the SnO2 / pCdTe, ITO / pCdTe and In2O3 / pCdTe photoconverters have been investigated. The real values of the series resistance of the structures under study have been determined. In film photoconverters, a significant contribution to the series resistance is made by the resistance of the transition dielectric layer of tellurium oxide TeO2 between the semiconductor and the resistance between the rear ohmic contact of the structures.
基于碲化镉的光电转换器sno2 / pcdte、ito / pcdte串联电阻И in2o3 / pcdte
研究了SnO2 / pCdTe、ITO / pCdTe和In2O3 / pCdTe光转换器的工作参数和效率。确定了所研究结构串联电阻的实际值。在薄膜光电变换器中,对串联电阻有重要贡献的是半导体之间的氧化碲TeO2过渡介电层的电阻和结构的后欧姆接触之间的电阻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信