Electric behaviour of ZnO varistor studied from TSC measurement

ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132) Pub Date : 1998-06-22 DOI:10.1109/ICSD.1998.709308

F. Yoshida, Y. Kamitani, M. Yoshiura, S. Maeta

{"title":"Electric behaviour of ZnO varistor studied from TSC measurement","authors":"F. Yoshida, Y. Kamitani, M. Yoshiura, S. Maeta","doi":"10.1109/ICSD.1998.709308","DOIUrl":null,"url":null,"abstract":"In this paper, the results of the ZnO varistor voltage-current characteristics and the thermally stimulated current (TSC) components separated in the temperature range from 50 to 340 K are reported. Additionally, some experimental results before and after applying high-voltage impulse (10 kV) as a false load are reported and discussed. From the experiments on the TSC of ZnO varistor, the following results were obtained: (1) some TSC curves (four or six) of the first-order that correspond to the discrete state individually in the grain boundary can be separated in the temperature range from 50 to 340 K. (2) The dominant TSC peak appeared around room temperature. The trap depth, Et, of this peak depends on the poling field Ep. As Ep increases, Et increased from ca. 0.31 to 0.38 eV. (3) The /spl nu/ value for the dominant TSC peak varied from ca. 10/sup 2/ to 10/sup 3/ 1/s. (4) From this detailed study on the /spl nu/ value of traps, it is understood that the varistor effect depends on the /spl nu/ value of the dominant TSC peak.","PeriodicalId":13148,"journal":{"name":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","volume":"1 1","pages":"393-396"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSD.1998.709308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

In this paper, the results of the ZnO varistor voltage-current characteristics and the thermally stimulated current (TSC) components separated in the temperature range from 50 to 340 K are reported. Additionally, some experimental results before and after applying high-voltage impulse (10 kV) as a false load are reported and discussed. From the experiments on the TSC of ZnO varistor, the following results were obtained: (1) some TSC curves (four or six) of the first-order that correspond to the discrete state individually in the grain boundary can be separated in the temperature range from 50 to 340 K. (2) The dominant TSC peak appeared around room temperature. The trap depth, Et, of this peak depends on the poling field Ep. As Ep increases, Et increased from ca. 0.31 to 0.38 eV. (3) The /spl nu/ value for the dominant TSC peak varied from ca. 10/sup 2/ to 10/sup 3/ 1/s. (4) From this detailed study on the /spl nu/ value of traps, it is understood that the varistor effect depends on the /spl nu/ value of the dominant TSC peak.

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用TSC法研究ZnO压敏电阻的电性能

本文报道了ZnO压敏电阻在50 ~ 340 K温度范围内的电压-电流特性和热刺激电流(TSC)分量的分离结果。此外，还报道并讨论了高压脉冲(10kv)作为假负载前后的一些实验结果。通过对ZnO压敏电阻的TSC实验，得到了以下结果:(1)在50 ~ 340 k的温度范围内，可以分离出晶界上分别对应于离散态的一阶TSC曲线(4条或6条);(2)TSC峰主要出现在室温附近。该峰的阱深度Et取决于极化场Ep。随着Ep的增加，Et从0.31 eV增加到0.38 eV。(3) TSC优势峰的/spl nu/值在10/sup 2 ~ 10/sup 3/ 1/s之间变化。(4)通过对陷阱/spl nu/值的详细研究，了解到压敏效应取决于TSC优势峰的/spl nu/值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)

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