Design and Fabrication of LAMB Wave Resonator Based on 15% Scandium-Doped Aluminum Nitride Thin Film

2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers) Pub Date : 2021-06-20 DOI:10.1109/Transducers50396.2021.9495603

Shuai Shao, Zhifang Luo, Tao Wu

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引用次数: 1

Abstract

This work reports the Lamb wave resonator based on 15% Sc-doped (Al0.85Sc0.15N) thin films using magnetron co-sputtering. The dispersion characteristics of Lamb wave resonators are simulated for Al0.85Sc0.15N. The dispersion properties of Lamb waves on the coupling coefficient in Al0.85Sc0.15N thin films were simulated. An electromechanical coupling factor of nearly 4% can be obtained for S0 mode Lamb wave resonators. Optimized design using 3D finite element analysis (FEA) with perfectly matched layer (PML) to improve quality factor. The resonator fabrication process is discussed in detail. Al0.85Sc0.15N thin films with a 1.7° FWHM of (0002) rocking curve were obtained. Al0.85Sc0.15N Lamb wave resonators operating at approximately 310 MHz were fabricated. A high electromechanical coupling coefficient (kt²) of 3.7 % is reported, with the loaded quality factor of 1165.7 and unloaded quality factor of 1253.2, respectively.

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15%掺钪氮化铝薄膜LAMB波谐振器的设计与制造

本文报道了基于15% sc掺杂(Al0.85Sc0.15N)薄膜磁控共溅射的Lamb波谐振器。模拟了Al0.85Sc0.15N下Lamb波谐振器的色散特性。模拟了Lamb波对Al0.85Sc0.15N薄膜中耦合系数的色散特性。50模兰姆波谐振器的机电耦合系数接近4%。采用具有完美匹配层(PML)的三维有限元分析(FEA)优化设计，提高质量因子。详细讨论了谐振腔的制作工艺。获得了FWHM为(0002)的1.7°摆动曲线的Al0.85Sc0.15N薄膜。制备了工作频率约为310 MHz的Al0.85Sc0.15N Lamb波谐振器。机电耦合系数(kt2)较高，达到3.7%，负载品质因数为1165.7，卸载品质因数为1253.2。

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2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)

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