Effect of feeding flow rate on characteristics of CuInSe2 films prepared by flash evaporation

C. Ali, Abdelwahab Hamdi, Hikmat S. Hilal
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Abstract

Copper indium selenide CuInSe2 (CISe) is one of the most promising absorber materials in high efficiency heterojunction thin-film solar cells due to its high conversion efficiency and known high stability. This paper describes a simple method for preparing CuInSe2 films from pre-prepared CuInSe2 ingot powder using a flash evaporation method. The primary goal of this work is to investigate the effect of feeding flow rate on CuInSe2 film characteristics. The powder feeding flow rate into the evaporator has been adjusted to control the film growth rate. Structure, composition, morphology, electrical and optical properties have all been studied for films deposited at different feeding flow rates. The results show that varying the feeding flow rate affects film characteristics, and that lower feeding rates yield films with better characteristics, which should be considered in future semiconductor film processing.
进料流量对闪蒸制备CuInSe2薄膜特性的影响
硒化铜铟(CISe)由于其高转换效率和高稳定性而成为高效率异质结薄膜太阳能电池中最有前途的吸收材料之一。本文介绍了一种用预先制备好的铟硒锭粉,用闪蒸法制备铟硒薄膜的简单方法。本工作的主要目的是研究进料流量对CuInSe2薄膜特性的影响。调节了进入蒸发器的粉料流量,以控制膜的生长速度。研究了不同进料速率下薄膜的结构、组成、形貌、电学和光学性能。结果表明,进料流量的变化会影响薄膜的特性,进料流量越小,薄膜的特性越好,这是今后半导体薄膜加工中应考虑的问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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