Leveraging sensitivity analysis for fast, accurate estimation of SRAM dynamic write VMIN

James Boley, V. Chandra, R. Aitken, B. Calhoun
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引用次数: 11

Abstract

Circuit reliability in the presence of variability is a major concern for SRAM designers. With the size of memory ever increasing, Monte Carlo simulations have become too time consuming for margining and yield evaluation. In addition, dynamic write-ability metrics have an advantage over static metrics because they take into account timing constraints. However, these metrics are much more expensive in terms of runtime. Statistical blockade is one method that reduces the number of simulations by filtering out non-tail samples, however the total number of simulations required still remains relatively large. In this paper, we present a method that uses sensitivity analysis to provide a total speedup of ∼112X compared with recursive statistical blockade with only a 3% average loss in accuracy. In addition, we show how this method can be used to calculate dynamic VMIN and to evaluate several write assist methods.
利用灵敏度分析快速,准确地估计SRAM动态写入VMIN
电路可靠性在可变性的存在是一个主要关注的SRAM设计者。随着内存大小的不断增加,蒙特卡罗模拟对于边际和成品率的评估变得过于耗时。此外,动态可写性指标比静态指标更有优势,因为它们考虑了时间约束。然而,就运行时而言,这些指标的成本要高得多。统计封锁是一种通过过滤掉非尾部样本来减少模拟次数的方法,但是所需的模拟总数仍然比较大。在本文中,我们提出了一种使用灵敏度分析的方法,与递归统计阻断相比,该方法提供了约112X的总加速,平均精度损失仅为3%。此外,我们还展示了如何使用该方法来计算动态VMIN和评估几种写辅助方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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