A 1/1.57-inch 50Mpixel CMOS Image Sensor With 1.0μm All-Directional Dual Pixel by 0.5μm-Pitch Full-Depth Deep-Trench Isolation Technology

2022 IEEE International Solid- State Circuits Conference (ISSCC) Pub Date : 2022-02-20 DOI:10.1109/ISSCC42614.2022.9731567

T. Jung, M. Fujita, Jeong Cho, Kyung-Hoon Lee, D. Seol, Sung-Jin An, Chanhee Lee, Youjin Jeong, Minji Jung, Sachoun Park, Seungki Baek, Seungki Jung, Seunghwan Lee, Jungbin Yun, E. Shim, Heetak Han, Eunkyung Park, Haesick Sul, Se-Won Kang, Kyungho Lee, JungChak Ahn, Duckhyun Chang

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引用次数: 2

Abstract

As the strong demand for higher resolution and new functionality is rapidly increasing in the mobile CMOS Image Sensor (CIS) market, we have seen the emergence of: submicron pixels, >200M pixels, fast readout, global shutter, high dynamic range, and phase-detection autofocus (PDAF) [1 – 3]. Among these, PDAF is an essential feature of cutting-edge CIS for accurate autofocus at extremely low-light situations, and dual-pixel technology has been widely used for AF of the entire image area [4]. To implement high pixel resolution in a limited optical size, the pixel size has continued to shrink, and the pixel structure has evolved to maintain high image quality. However, for a dual pixel, integrating two photodiodes (PDs) in one pixel by backside deep trench isolation (BDTI) has technical limitations and causes degradation of image AF performance as well as image quality.

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采用0.5μm间距全深度深沟隔离技术的1.0μm双向双像素1/1.57英寸50Mpixel CMOS图像传感器

随着移动CMOS图像传感器(CIS)市场对更高分辨率和新功能的强烈需求迅速增加，我们看到了:亚微米像素，>200M像素，快速读出，全局快门，高动态范围和相位检测自动对焦(PDAF)的出现[1 - 3]。其中，PDAF是尖端CIS在极弱光情况下实现精确自动对焦的重要特性，双像素技术已广泛应用于整个图像区域的自动对焦[4]。为了在有限的光学尺寸下实现高像素分辨率，像素尺寸不断缩小，像素结构不断进化以保持高图像质量。然而，对于双像素，通过背面深沟槽隔离(BDTI)将两个光电二极管(pd)集成在一个像素中存在技术局限性，并且会导致图像自动对焦性能和图像质量下降。

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2022 IEEE International Solid- State Circuits Conference (ISSCC)

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