N-Doped Zigzag Graphene Nanoribbons For Nanoscale Interconnects

S. Agrawal, A. Srivastava, G. Kaushal
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引用次数: 2

Abstract

The density-functional theory-based investigations of Nitrogen (N) doping effect on the electron transport and the dynamical parameter of Zigzag graphene Nanoribbon (ZGNR), has been performed to improvise it suitability as interconnects. Three possibilities of N impurities around a monovacancy have been investigated in terms of stability, electronic, and transport properties of GNR. The Formation-energy calculations suggest that the formation of the pyridine-type defects with nitrogen doping is energetically more favorable in the presence of a vacancy in comparison to its pristine counterpart. From the electronic bandstructure and density of states analysis, we have found that metallicity of the ZGNR increases with N doping, and from the transport properties analysis, it is found that monovacancy with two nitrogen-doped (Pyr-2N) results in higher current with a constant slope, defends its suitability for nanoscale interconnects.
用于纳米级互连的n掺杂之字形石墨烯纳米带
基于密度泛函理论研究了氮掺杂对之字形石墨烯纳米带(ZGNR)电子输运和动力学参数的影响,以改进其作为互连材料的适用性。从GNR的稳定性、电子性质和输运性质等方面研究了单空位周围N杂质存在的三种可能性。形成能计算表明,与原始缺陷相比,氮掺杂在空位存在的情况下,在能量上更有利于吡啶型缺陷的形成。从电子能带结构和态密度分析中,我们发现氮掺杂增加了ZGNR的金属丰度;从输运性质分析中,我们发现两个氮掺杂(Pyr-2N)的单空位导致更高的电流和恒定的斜率,证明了它适合纳米级互连。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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