Characterization of a humidity sensor that incorporates a cmos capacitance measuring circuit

S.V. Silverthorne, C.W. Watson, R.D. Baxter
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引用次数: 17

Abstract

An integrated relative humidity sensor that combines a capacitive sensor with CMOS measurment circuitry on the smae 1.4 mm × 5.0 mm silicon chip has been designed, fabricated and tested. The device provides a d.c. voltage output that varies linearly with relative humidity over the entire range 0 to 100%.

When it is compared to discrete capacitive relative humidity sensors, the integrated sensor design offers the advantages of greater adaptability to standard instrumentation, low power consumption and ease in remote location of the sensor. It has the additional advantage of single-point calibration capability.

Measurements of sensor output show the expected linearity and close agreement with theory. The response time has been found to be about 10 s, while repeatability and hysterisis and typically within 1.6% of fullscale output. A thermistor is packaged with the sensor to provide compensation for temperature effects.

一种包含cmos电容测量电路的湿度传感器的特性
设计、制作并测试了一种将电容式传感器与CMOS测量电路结合在同一块1.4 mm × 5.0 mm硅片上的集成相对湿度传感器。该设备提供直流电压输出,在0到100%的整个范围内随相对湿度线性变化。与离散电容式相对湿度传感器相比,集成式传感器设计具有对标准仪器适应性更强、功耗低和易于远程安装传感器的优点。它具有单点校准能力的额外优势。传感器输出的测量结果显示出预期的线性,与理论结果非常吻合。响应时间约为10 s,而可重复性和迟滞性通常在满量程输出的1.6%以内。热敏电阻与传感器一起封装,以补偿温度效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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