DYNAMICS OF EMISSION FROM A SEMICONDUCTOR LASER WITH AN EXTERNAL RESONATOR

Abstract

Theoretical and experimental investigations were made of an ILPN-216A semiconductor emitter operating at 1.3 μm. A feature of the design of this emitter was a laser diode with an external resonator as the active element. The calculations were in good agreement with the experimental values of the mode intensity in the cw and pulsed regimes. In the pulsed regime when the ILPN-216A emitter was pumped additionally by a continuous threshold current, a single-frequency radiation spectrum was obtained and the ratio of the emitted mode to the adjacent mode was at least 20 dB.