Performance Analysis of Double Gate Junctionless TFET with respect to different high-k materials and oxide thickness

Abstract

Double gate junction-less tunnel field effect transistor (DGJL-TFET) is investigated in this paper. The presence of double gate enhances high control over the channel for current conduction and the performance analysis of various parameters like input and output characteristics have been carried out by varying its dielectric materials with different dielectric constant and changing the thickness of oxide material. The complete device simulation and analysis are made using TCAD simulator. The simulation results depicting that the dielectric materials with high dielectric constant yields good electrical characteristics and the oxide with the least thickness value helps in better current conduction with good Ion/Ioff ratio. So this device is a promising device for low power application. Also by using dielectric with high dielectric constant increases the ON current which makes the device more flexible in nature.