Study of the properties of indium doped ZnO nanowires

Abstract

Indium doped ZnO nanowires were synthesized by carbothermal reduction method in a quartz tube. The nanowires were characterized by FESEM for morphological structure, the results showed a hexagonal structure with diameter around 40 – 100 nm, and lengths from hundreds of nanometers to a few microns. EDX was also used for materials composition and all the composition were found in the spectrum. XRD was then used for checking crystallinity of the structure. ZnO nanowires were than measured for electrical properties. The results show that the indium doped ZnO nanowires has lower resistivity compare to the undoped ZnO nanowires. Gas sensing characterization has also been performed.