R. Hrdy, J. Prásek, Patrik Fillner, Silvestr Vančík, M. Schneider, J. Hubálek, U. Schmid
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引用次数: 1
Abstract
We presented the development and characterization of high-k stack HfO2/Al2O3 capacitor, fabricated directly on chip. The capacitor is based on nanolaminate material directly grown by plasma-assisted Atomic Layer Deposition (ALD)in a single reactor chamber. The deposition process was performed at a single temperature (250°C). We tested the various numbers of layers in the stack, compared the electrical and material characterizations. Using the optimal deposition conditions, we obtained a structure with nanolaminates of single thickens 5 Å, capacitance density of 1.10−12 F.μm−2 and leakage current density of $1.10^{-9}$ A.cm−2.