Void-Defect Induced Magnetism and Structure Change of Carbon Materials -Ⅰ: Graphene Nano Ribbon

Q3 Engineering
N. Ota, L. Nemes
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引用次数: 0

Abstract

Void-defect is a possible origin of ferromagnetic-like feature of pure carbon material. Applying density functional theory to void-defect induced graphene-nano-ribbon (GNR), a detailed relationship between multiple-spin-state and structure change was studied. An equilateral triangle of an initial void having six electrons is distorted to isosceles triangle by re-bonding carbon atoms. Among possible spin-states of Sz=0/2, 2/2, 4/2 and 6/2, the most stable state was Sz=2/2. The case of Sz=4/2 is remarkable that initial flat ribbon turned to three dimensionally curled one having highly polarized spin configuration at ribbon edges. Total energy of Sz=4/2 was very close to that of Sz=2/2, which suggests coexistence of flat ribbon and curled ribbon. As a model of three dimensional graphite, bi-layered AB stacked GNR was analyzed for cases of different void position of α-site and β-site. Spin distribution was limited to the surface layer, nothing to the back layer. Distorted void triangle show 60degree clockwise rotation from αto β-site, which was consistent with experimental observation using the scanning tunneling microscope. This study revealed that void-defect in GNR induces unusual polarized spin state, different with usual ferromagnetic one. [ To be published on Journal of the Magnetics Society of Japan (2021), e-mail to Norio Ota: n-otajitaku@nifty.com ]
碳材料的空洞缺陷诱导磁性和结构变化-Ⅰ:石墨烯纳米带
空洞缺陷可能是纯碳材料具有铁磁性的原因之一。将密度泛函理论应用于石墨烯纳米带(GNR)中,详细研究了多自旋态与结构变化的关系。具有6个电子的初始空洞的等边三角形通过碳原子重键而被扭曲成等腰三角形。在Sz=0/2、2/2、4/2和6/2的可能自旋状态中,最稳定的状态是Sz=2/2。值得注意的是,Sz=4/2的情况下,初始的平面带状转变为三维卷曲的带状,在带状边缘具有高度极化的自旋构型。Sz=4/2的总能量与Sz=2/2的总能量非常接近,说明扁平带和卷曲带共存。作为三维石墨的模型,分析了双层AB堆叠GNR在α-位点和β-位点空隙位置不同的情况。自旋分布仅限于表面层,对后层没有影响。扭曲的空洞三角形从α位点到β位点呈顺时针旋转60度,这与扫描隧道显微镜的实验观察结果一致。研究发现,GNR中存在的空隙缺陷导致了不同于一般铁磁自旋态的异常极化自旋态。[将发表在日本磁学会杂志(2021),电子邮件给Norio Ota: n-otajitaku@nifty.com]
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来源期刊
Journal of the Magnetics Society of Japan
Journal of the Magnetics Society of Japan Engineering-Electrical and Electronic Engineering
CiteScore
2.00
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