Electrical and structural properties of the Si/C interface in poly-Si thin films on graphite substrates [for PV cells]

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520211

T. Reindl, W. Kruhler, M. Pauli, J. Muller

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引用次数: 1

Abstract

For the first time the Si/C interface in poly-Si photovoltaic thin films on graphite substrate is described. The isostatically pressed graphite is covered with a 3-5 /spl mu/m thick amorphous silicon layer which is recrystallized by the ZMR method (zone melting recrystallization by means of a line electron beam). During ZMR the molten silicon penetrates into the graphite pores, while at the interface /spl beta/-SiC particles with a size of 50-1000 nm were formed (TEM, SEM analysis). Furthermore there exists a "reaction zone" where Si, SiC and C are found by electron diffraction. As a consequence the poly-Si layer shows an excellent adhesion to the substrate. Since there is no continuous electrically insulating SiC layer formed, highly boron doped seed layers show an ohmic contact to the graphite. The investigated poly-Si thin films on graphite substrate offer a great potential for photovoltaic application after epitaxy up to 50 /spl mu/m by LPE or CVD.

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石墨基多晶硅薄膜中Si/C界面的电学和结构特性[用于光伏电池]

首次描述了石墨衬底上多晶硅光伏薄膜的硅/碳界面。在等静压石墨表面覆盖3-5 /spl μ m厚的非晶硅层，采用ZMR法(线电子束区域熔化再结晶法)进行再结晶。在ZMR过程中，熔融硅渗透到石墨孔中，在界面处形成了50 ~ 1000 nm大小的/spl β /-SiC颗粒(TEM、SEM分析)。此外，还存在一个“反应区”，在那里通过电子衍射可以发现Si、SiC和C。因此，多晶硅层对衬底具有优异的附着力。由于没有形成连续的电绝缘SiC层，高硼掺杂的种子层显示出与石墨的欧姆接触。所研究的石墨衬底多晶硅薄膜在LPE或CVD外延达到50 /spl mu/m后，具有很大的光伏应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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