Noise measurements of single electron transistors using a transimpedance amplifier1

B. Starmark, P. Delsing, D.B. Haviland, T. Claeson
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引用次数: 6

Abstract

We have measured a single electron transistor (SET) using a transimpedance amplifier which increases the bandwidth of the SET by two orders of magnitude compared to the conventional voltage sensitive amplifier. Using this amplifier to measure the properties of the SET we find a bandwidth of 6.2 kHz and measure the SET noise density up to 1 kHz. The noise is δQn≈3.9×10−5 e/Hz at 300 Hz.

用透阻放大器测量单电子晶体管的噪声
我们使用跨阻放大器测量了单电子晶体管(SET),与传统的电压敏感放大器相比,该放大器将SET的带宽提高了两个数量级。使用该放大器测量SET的特性,我们发现带宽为6.2 kHz,并测量到SET的噪声密度高达1 kHz。300 Hz时噪声为δQn≈3.9×10−5 e/Hz。
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