A 165GHz OOK transmitter with 10.6% peak DC-to-RF efficiency in 65nm bulk CMOS

Y. Ye, Bo Yu, Q. Gu
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引用次数: 9

Abstract

This paper presents a high efficiency 165 GHz OOK transmitter on a 65nm CMOS technology, including a transformer impedance optimization based fundamental cross-coupled oscillator followed by a high-speed and high on-off ratio SPST switch based modulator. The transmitter demonstrates the highest DC-to-RF efficiency (10.6%) beyond 140 GHz in silicon processes, with a high output power (0.66 dBm), a high on-off ratio (> 32 dB) and a low phase noise (-105.4 dBc/Hz @ 1 MHz offset). The standalone oscillator also demonstrates the record DC-to-RF efficiency of 25.9% beyond 140 GHz in silicon processes. The transmitter is designed compact with the core area of 240 μm × 130 μm.
一种165GHz OOK发射机,在65nm大块CMOS中具有10.6%的峰值dc - rf效率
本文提出了一种基于65nm CMOS技术的高效率165 GHz OOK发射机,包括基于变压器阻抗优化的基频交叉耦合振荡器和基于高速高通断比SPST开关的调制器。该发射机在硅工艺中具有超过140 GHz的最高dc - rf效率(10.6%),具有高输出功率(0.66 dBm),高通断比(> 32 dB)和低相位噪声(-105.4 dBc/Hz @ 1 MHz偏移)。在硅制程中,该独立振荡器的DC-to-RF效率在140 GHz以上达到创纪录的25.9%。发射机设计紧凑,核心面积为240 μm × 130 μm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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