Simulation Based Analysis of Grain Boundary in IBC Perovskite Solar Cells

Abstract

IBC solar cell structure offers tremendous advantages to perovskite solar cells owing to high carrier mobility in these devices and lower recombination. However, the presence of Grain Boundary in the active layer region tends to increase the surface recombination near the Grain Boundary and this leads to degradation in device performance. In this paper, we have carried out the simulations on MatLab and have tried to quantify the effect of Grain Boundary on the device performance by discussing the parameters such as Defect Density, Band-Bending, SRV near Grain Boundary and Grain Size. The results show that with the typical values of the process parameters, device performance for device length beyond 1 µm is compromised. Further, it was found that by improving on the parameters discussed by an order of 10 can lead to devices with similar performance but with device length up to 8 µm, which can further be increased provided there is improvement in process parameters.