An investigation on the robustness, accuracy and simulation performance of a physics-based deep-submicronmeter BSIM model for analog/digital circuit simulation

Yuhua Cheng, M. Jeng, Zhihong Liu, Kai Chen, M. Chan, C. Hu, Ping Keung Kox
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引用次数: 8

Abstract

We present an accurate and unified MOSFET model with benchmark test results for analog/digital circuit simulation. The results show that the model can pass most benchmarks suggested for a model used in circuit simulation by SEMATECH recently, and ensures good scalability and accuracy. The model has been implemented in HSpice, Spectre, SmartSpice and Spice3e2.
基于物理的深亚微米模拟/数字电路仿真BSIM模型的鲁棒性、准确性和仿真性能研究
我们提出了一个精确和统一的MOSFET模型,并提供了模拟/数字电路仿真的基准测试结果。结果表明,该模型可以通过SEMATECH最近提出的电路仿真模型的大部分基准测试,并具有良好的可扩展性和准确性。该模型已在HSpice、Spectre、SmartSpice和Spice3e2中实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
3.80
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