Deposition Kinetics of CVD-Silicon Carbonitride Coatings

Abstract

In the present work some conformities of atmospheric CVD-process with silicon carbonitride layers synthesis as an example are discussed. It is proposed the chemisorption - kinetic mechanism of the coatings heterogeneous synthesis. The possibility of this mechanism existence is conditioned by the limited adsorptive capacity of the growing surface and by defining the surface processes as the leading (limiting) stage of the CVD-synthesis. The effect of the chemisorptive surface memory is discovered. The idea of it is as follows: after a sharp changing of CVD-synthesis temperature the surface keeps the information about the blocked centers number at its previous state.