Design of Cmos Low Noise Amplifier using an Automated System-on-Chip Methodology

M. Ibrahim, Kawther I. Arafa, F. Farag, I. Abdalla
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Abstract

This paper presents an automatic methodology for RF transceiver circuit design. This algorithm is based on analytically driven equations for calculating the required circuit specifications. The presented algorithm is useful for the designers to calculate their initial design parameters closed to the optimum operating point. The analog gm/ID model is used for the circuit design. In order to verify the idea, a CMOS cascade LNA design methodology is presented for a receiver front end. The design methodology is divided into three steps: first the RF amplifier design for the required band; second the band limitation using a tuned circuit. and finally the impedance matching. A MATIAB program is developed for a complete circuit design (MOST’s size, bias current, LS, LD, and LG). The CMOS LNA is simulated at 4 GHz using Cadence CAD tools in the 0.13um CMOS technology parameters. The results are compared to the analytical analysis, and it showed the applicability of the proposed algorithm.
采用自动化片上系统方法设计Cmos低噪声放大器
本文提出了一种射频收发电路的自动设计方法。该算法基于解析驱动方程来计算所需的电路规格。该算法有助于设计者在接近最优工作点时计算初始设计参数。电路设计采用模拟gm/ID模型。为了验证这一想法,提出了一种用于接收器前端的CMOS级联LNA设计方法。设计方法分为三个步骤:首先对所需频段的射频放大器进行设计;第二,使用调谐电路的频带限制。最后是阻抗匹配。为完整的电路设计(MOST的尺寸,偏置电流,LS, LD和LG)开发了MATIAB程序。在0.13um CMOS技术参数下,使用Cadence CAD工具在4 GHz下对CMOS LNA进行仿真。结果与解析分析结果进行了比较,表明了所提算法的适用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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