Role of Slurry Chemistry for Defects Reduction During Barrier CMP

Abstract

In state of the art technologies, defect reduction is central to the achievement of low cost, high yield manufacturing. The defects occurred during the CMP process would lead to severe circuit failure and affect yield. In this paper, effect of slurry chemistry on surface defect during barrier CMP was studied. The experimental results showed that the complexation can effectively remove the copper residue, but would induce large dishing and erosion, if the complexation is so strong. The strong electrostatic attraction on oxide surface can improve the removal rate selectivity of OX to Cu and reduce the dishing and erosion. The dispersion effect and wetting effect can prevent the agglomeration of abrasive particles and make the copper surface hydrophilic, it can effectively reduce scratch defect during CMP.