Yen-Cheng Chiu, Han-Wen Hu, Li-Ya Lai, Tsung-Yuan Huang, Hui-Yao Kao, K. Chang, M. Ho, Chung-Cheng Chou, Y. Chih, T. Chang, Meng-Fan Chang
{"title":"A 40nm 2Mb ReRAM Macro with 85% Reduction in FORMING Time and 99% Reduction in Page-Write Time Using Auto-FORMING and Auto-Write Schemes","authors":"Yen-Cheng Chiu, Han-Wen Hu, Li-Ya Lai, Tsung-Yuan Huang, Hui-Yao Kao, K. Chang, M. Ho, Chung-Cheng Chou, Y. Chih, T. Chang, Meng-Fan Chang","doi":"10.23919/VLSIT.2019.8776540","DOIUrl":null,"url":null,"abstract":"This work proposes (1) an auto-forming (AF) scheme to shorten the macro forming time $(\\text{T}_{\\text{FM}-\\text{M}})$ and testing costs; (2) an auto-RESET (ARST) scheme to shorten page-RESET time $(\\text{T}_{\\text{W}-\\text{PAGE}-\\text{RST}})$ for expanding the applications of hidden-RESET operation in standby mode, and (3) an auto-SET (ASET) scheme to shorten page-write time $(\\text{T}_{\\text{W}-\\text{PAGE}})$ combined with hidden-RESET scheme. A fabricated 40nm 2Mb ReRAM macro achieved 85+% reduction in TFM-M, and $99+\\%$ reduction in $\\text{T}_{\\text{W}}-\\text{PAGE}$ for a page. For the first time, AF, ARST, and ASET schemes are demonstrated in silicon for ReRAM. Keywords: ReRAM, forming, page-write","PeriodicalId":6752,"journal":{"name":"2019 Symposium on VLSI Technology","volume":"58 1","pages":"T232-T233"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2019.8776540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
This work proposes (1) an auto-forming (AF) scheme to shorten the macro forming time $(\text{T}_{\text{FM}-\text{M}})$ and testing costs; (2) an auto-RESET (ARST) scheme to shorten page-RESET time $(\text{T}_{\text{W}-\text{PAGE}-\text{RST}})$ for expanding the applications of hidden-RESET operation in standby mode, and (3) an auto-SET (ASET) scheme to shorten page-write time $(\text{T}_{\text{W}-\text{PAGE}})$ combined with hidden-RESET scheme. A fabricated 40nm 2Mb ReRAM macro achieved 85+% reduction in TFM-M, and $99+\%$ reduction in $\text{T}_{\text{W}}-\text{PAGE}$ for a page. For the first time, AF, ARST, and ASET schemes are demonstrated in silicon for ReRAM. Keywords: ReRAM, forming, page-write
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