Growth and preliminary characterization of InAsSb photodiodes for mid-wave infrared detection

IF 2.3 4区物理与天体物理 Q2 OPTICS

Fiber and Integrated Optics Pub Date : 2019-09-13 DOI:10.1117/12.2536801

K. Lipski, Ł. Kubiszyn, K. Michalczewski, Krzysztof Murawski, P. Martyniuk

引用次数: 0

Abstract

This paper reports on the growth details and preliminary characterization of mid-wave infrared radiation InAsSb bariodes. The main device parameters were measured for barrier photodetector heterostructures with three different InAsSb absorber thicknesses: 1 µm (sample no. 1); 1.70 μm (sample no. 2); 2.56 μm (sample no. 3) and one non intentionally doped, 1.70 μm (sample no. 4). The crystallographic structure, responsivity, I-V curves and detectivity characterization were performed.

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用于中波红外探测的InAsSb光电二极管的生长和初步表征

本文报道了中波红外辐射InAsSb钡的生长细节和初步表征。测量了三种不同吸收层厚度的势垒光电探测器异质结构的主要器件参数:1µm(样品号;1);1.70 μm(样品号)2);2.56 μm(样品号)3)和一个非故意掺杂的，1.70 μm(样品号;4)进行了晶体结构、响应度、I-V曲线和探测度表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Fiber and Integrated Optics 物理-光学

CiteScore

3.40

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Fiber and Integrated Optics , now incorporating the International Journal of Optoelectronics, is an international bimonthly journal that disseminates significant developments and in-depth surveys in the fields of fiber and integrated optics. The journal is unique in bridging the major disciplines relevant to optical fibers and electro-optical devices. This results in a balanced presentation of basic research, systems applications, and economics. For more than a decade, Fiber and Integrated Optics has been a valuable forum for scientists, engineers, manufacturers, and the business community to exchange and discuss techno-economic advances in the field.