Demonstration of Electronically-Tunable Laser Structure Employing a Semiconductor Optical Amplifier and an Opto-VLSI Processor

Abstract

A 1300nm electronically-tunable laser structure employing an Opto-VLSI processor and a semiconductor optical amplifier is demonstrated. Wavelength tuning is realized by reconfiguring the holographic diffraction grating of an Opto- VLSI processor, allowing specific wavelengths to lase through the semiconductor optical amplifier. A tuning range of 5.7 nm is experimentally demonstrated.