A low-power low-phase-noise wide-tuning-range 60-GHz voltage-controlled oscillator in 0.18-µm CMOS

To-Po Wang
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引用次数: 1

Abstract

A low-power low-phase-noise wide-tuning-range 60-GHz push-push voltage-controlled oscillator (VCO) is presented in this paper. To eliminate the required λ/4 micropstrip or coplanar waveguide (CPW) line of the conventional push-push VCO, the enhanced second-harmonic output signal (2fo) is extracted at middle of the varactors, leading to a minimized chip area. By employing MOS varactors deposited between the drain and source terminations of the cross-coupled pair, the tuning range is effectively boosted, and the phase noise is improved. According to these techniques, the fabricated 0.18-µm CMOS VCO exhibits a measured 8.3% tuning range. Operating at 1.2-V supply voltage, the VCO dissipates 7.7-mW dc power excluding the testing buffers. The measured phase noise at 1-MHz offset from 61.5-GHz oscillation frequency is •91.5 dBc/Hz. Compared to recently published 60-GHz VCOs in 0.13-µm CMOS, this work can simultaneously achieve low phase noise, wide tuning range, and low dc power, resulting in the better figure of merit (FOM) and figure of merit considering the tuning range (FOMT).
一种低功耗、低相位噪声、宽调谐范围60ghz的0.18µm CMOS压控振荡器
提出了一种低功耗、低相位噪声、宽调谐范围的60 ghz推推式压控振荡器(VCO)。为了消除传统推推式压控振荡器所需的λ/4微带或共面波导(CPW)线,在变容管的中间提取增强的二次谐波输出信号(2fo),从而使芯片面积最小化。通过在交叉耦合对的漏极端和源端之间沉积MOS变容二极管,有效地提高了调谐范围,改善了相位噪声。根据这些技术,制备的0.18µm CMOS压控振荡器具有8.3%的调谐范围。工作在1.2 v电源电压下,VCO耗散7.7 mw直流功率,不包括测试缓冲器。从61.5 ghz振荡频率偏移1 mhz处测量到的相位噪声为91.5 dBc/Hz。与最近发表的0.13µm CMOS的60 ghz vco相比,该工作可以同时实现低相位噪声、宽调谐范围和低直流功率,从而获得更好的性能因数(FOM)和考虑调谐范围的性能因数(FOM)。
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